新型锑氧簇光刻胶的性能与机理研究

Performance and mechanism of novel antimony oxo cluster photoresist

随着半导体行业集成度越来越高,对光刻材料提出了更高的要求。近年来,金属氧簇光刻胶由于尺寸小、结构设计灵活,得到了广泛的研究。目前锑基金属光刻胶仅局限于含锑配合物。开发出新型锑氧簇光刻胶,通过对比金属有机组装Sb_(4)O-1与自组装Sb_(4)O-2的溶解度差异说明自组装策略优势。原子力显微镜证实Sb_(4)O-2光刻胶可形成光滑薄膜,并获得低粗糙度值(均方根粗糙度<0.3 nm)。电子束光刻(EBL)证明Sb_(4)O-2光刻胶优异的图案化能力(线宽<50 nm),理论计算支持X射线光电子能谱(XPS)分析的新型自组装Sb_(4)O-2“配体解离”机制。

With the increasing integration of semiconductor industry,higher requirements are put forward for lithographic materials.In recent years,metal-oxygen oxo clusters(MOCs)photoresists have been widely studied due to the small size and flexible structure design.At present,antimony-based photoresistsare limited to antimonycontaining complexes.In this paper,a novel antimony-oxygen oxo cluster photoresist was developed,and the advantages of the self-assembly strategy was demonstrated by comparing the solubility difference between metalorganic assembled Sb_(4)O-1 and self-assembled Sb_(4)O-2.Atomic force microscopy(AFM)confirmed that Sb_(4)O-2 photoresists can form smooth films with a low roughness value(root mean square roughness<0.3 nm).Electron beam lithography(EBL)demonstrated the excellent patterning ability of Sb_(4)O-2 photoresist(line width<50 nm),and theoretical calculations supported a novel self-assembled Sb_(4)O-2“ligand dissociation”mechanism analyzed by Xray photoelectron spectroscopy(XPS).This work inspired the exploration of additional metal oxygen oxo cluster materials.