基于深沟槽单次外延工艺超级结MOS器件耐压提升与优化

Voltage enhancement and optimization of super junction MOS devices based on deep trench single epitaxial process

介绍了超级结MOS器件的一种主流工艺—深沟槽单次外延工艺,详细介绍了该工艺的工艺流程及特点。基于超级结MOS器件的电荷平衡原理,分析不同P柱浓度条件下器件击穿电压(Breakdown Voltage)的变化规律,揭示击穿电压(BV)偏低的原因,提出一种改善方案,最终通过实验验证该方案的可行性。

In this paper,a mainstream technology for manufacturing super junction MOS(SJMOS)devices,namely the Deep Trench Single Epitaxial Process(DTSE),is introduced.And the flow and characteristics of DTSE are described in detail.Based on the charge balance principle of SJMOS,the variation of breakdown voltage(BV)under different P-pillar doping concentrations is analyzed,revealing the reasons for the low BV.A improvement solution is proposed,and its feasibility is demonstrated through the experimental verification.