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碲化镉多晶合成工艺研究

CdTe Polycrystalline Synthesis Process Research
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摘要 使用多温区摇摆炉摇摆法制备了Ф52 mm的碲化镉多晶,深入研究了不同装料方式、温度工艺对晶体样品表面状态的影响规律。碲化镉晶体属于立方晶系,为闪锌矿结构。随着装料层数的增加,第一反应温度波动区温度升幅由172℃增加至278℃,温度变化速率由27.6℃/min增加至75.9℃/min。表明随着装料层数的增加,碲和镉之间的反应速率也显著提升,二者反应放热导致出现第一反应温度波动区。而随着降温由0.35℃/min降低至0.2℃/min,样品表面状态显著改善,表面孔洞数量大幅减少甚至消失,有利于碲化镉多晶后续的进一步加工。 Ф52 mm CdTe polycrystal is prepared using the multi-temperature zone swing furnace swing method,and the influence of different charging methods and temperature processes on the surface state of the crystal sample was studied in depth.CdTe crystal belongs to the cubic crystal system and has a sphalerite structure.As the number of charging layers increases,the temperature rise in the first reaction temperature fluctuation zone increases from 172℃to 278℃,and the temperature change rate increases from 27.6℃/min to 75.9℃/min.It shows that as the number of charging layers increases,the reaction rate between Te and Cd also increases significantly,and the exothermic reaction between the two causes the first reaction temperature fluctuation zone.As the temperature decreases from 0.35℃/min to 0.2℃/min,the surface condition of the sample is significantly improved,and the number of surface holes is greatly reduced or even disappeared,which is beneficial to the subsequent further processing of CdTe polycrystalline.
作者 陈成 朱蓉辉 穆怀慈 卢王威 CHEN Cheng;ZHU Ronghui;MU Huaici;LU Wangwei(Materials Science Gusu Laboratory,Suzhou 215000,China)
出处 《电子工业专用设备》 2024年第3期4-8,共5页 Equipment for Electronic Products Manufacturing
关键词 碲化镉 温度工艺 装料方式 表面状态 摇摆法 CdTe Temperature process Charging method Surface state Rocking method
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