SiC高温退火表面保护薄膜制备的研究

Preparation of SiC Surface Protective Film Annealed at High Temperature

采用光刻胶涂覆、PVD、PECVD和RIE方法制备的类金刚石(DLC)薄膜覆盖于SiC晶片表面,作为SiC离子注入后高温激活退火的保护层,高温退火后晶片表面均无明显形貌退化,从薄膜应力、厚度、产能及成本等方面对4种方法进行了对比和分析。

Diamond-like carbon(DLC)films prepared by photoresist coating,PVD,PECVD and RIE cover the surface of SiC wafer as the protective layer for high-temperature activation annealing after SiC ion implantation.There is no obvious morphological degradation on all the wafer surfaces after high-temperature annealing.The four methods are compared and analyzed from the aspects of film stress,thickness,productivity and cost.