摘要
在众多高介电常数栅介质材料中氧化镧(La_(2)O_(3))因带隙大、热稳定性良好等特点而具有代替传统SiO_(2)栅介质材料的潜力。介绍了La_(2)O_(3)薄膜的制备方法,综述了目前改善La_(2)O_(3)薄膜介电性能的方法并展望了其未来发展前景。
Among many high dielectric constant gate dielectric materials,La_(2)O_(3) possesses the characteristics of large band gap and good thermal stability,and has the potential to replace the traditional SiO_(2) gate dielectric.In this paper,the preparation methods of La_(2)O_(3) thin films were introduced,and the current approaches to improve the dielectric properties of La_(2)O_(3) films were reviewed.In the end,the future development of La_(2)O_(3) was prospected.
作者
魏小茹
陈文杰
王锋
朱胜利
Wei Xiaoru;Chen Wenjie;Wang Feng;Zhu Shengli(College of Materials Science and Engineering,Lanzhou Jiaotong University,Lanzhou 730070;College of Chemical Engineering and Materials,Quanzhou Normal University,Quanzhou 362000;College of Materials Science and Engineering,Tianjin University,Tianjin 300350;College of New materials and Footwear and Clothing Engineering,Liming Vocational University,Quanzhou 362000)
出处
《化工新型材料》
CAS
CSCD
北大核心
2024年第6期33-37,共5页
New Chemical Materials
基金
福建省科技重大专项专题项目(2021HZ021027)
福建省自然科学基金(2020J01776)
省级科技创新重点项目(2021G02028)。
