摘要
为对大尺寸、高精度、紫外全息光刻系统光束质量进行监控,提出了一种基于二次全息光刻生成莫尔条纹的检测方法。阐述了莫尔条纹形状与全息光刻光束质量的关系,建立了二次曝光微调角度与莫尔条纹周期关系的模型,给出了实际工作中的微调角度范围,并进行了实验验证。实验结果显示,不同微调角度下莫尔条纹的周期与仿真结果误差在3%以内,10°微调角度下莫尔条纹的形貌与仿真结果相对应,不同相干光状态和存在一定装调误差下的莫尔条纹形貌与仿真结果一致,并通过扫描电子显微镜(SEM)观察结果证实。该方法不需要对每一个光栅进行形貌检测,即可快速、间接地展现全息光刻系统的状态,是一种高效的检测方法。
To monitoring the beam quality of large-sized,high-precision and ultraviolet holographic lithography systems,a detection method based on double holographic lithography to generate Moiréfringe was proposed.The relationship between the shape of Moiréfringes and holographic lithography beam quality was explained.A model of relationship between second exposure changing angle and Moiréfringe period was established,the range of changing angles in practice were given and then verified by experiments.The experimental results show that the Moiréfringe period under different changing angles have errors within 3%with simulation results.The morphology of Moiréfringes under 10°changing angle corresponds to the simulation results,and morphologies of Moiréfringes under different coherent light states and certain tuning errors are consistent with simulation results,which are confirmed by scanning electron microscopy(SEM)observations.The proposed method does not require morphology detection for each grating and can show the state of the holographic lithography system quickly and indirectly,which making it an effective detection method.
作者
郝腾
姚文港
张奇
Hao Teng;Yao Wengang;Zhang Qi(The 13th Research Institute,CETC,Shijiazhuang 050051,China)
出处
《微纳电子技术》
CAS
2024年第6期165-172,共8页
Micronanoelectronic Technology
关键词
全息光刻
莫尔条纹
光路
检测
周期
holographic lithography
Moiréfringe
lightpath
detection
period