CuSCN复合空穴传输层优化高性能二维钙钛矿太阳能电池

Optimization of CuSCN Composite Hole Transport Layer for High-performance Two-dimensional Perovskite Solar Cells

研究了P型材料掺杂材料硫氰化铜(CuSCN)对二维(2D)钙钛矿太阳能电池的聚丙烯酰胺(PTAA)空穴传输层性能的影响,发现添加CuSCN可以提高PTAA的空穴传输能力,从而改善器件的电流密度和填充因子。进一步地,探讨了不同掺杂浓度的CuSCN对器件载流子转移过程的影响,与未掺杂CuSCN的基准二维钙钛矿太阳能电池相比,基于2%CuSCN掺杂的空穴传输层的器件具有最佳的性能(最高光电转换效率从10.5%大幅提高到12.9%)。改善的主要原因是短路电流密度(由16.7到18.3 mA/cm^(2))和填充因子(由59.1%提升至66.3%)的显著提高,这说明掺杂CuSCN有利于提高PTAA的空穴传输能力和二维钙钛矿太阳能电池的光电转换效率。

The paper studied the effect of copper thiocyanide(CuSCN),a P-type material doping material,on the performance of the polyacrylamide(PTAA)hole transport layer of two-dimensional(2D)chalcogenide solar cells.It is found that the addition of CuSCN can enhance the hole transport ability of PTAA,thus improving the current density and fill factor of the device.Further this study investigated the effect of different doping concentrations of CuSCN on the carrier transfer process of the device,and the device based on a 2%CuSCN-doped hole transport layer had the best performance(the maximum photovoltaic conversion efficiency was significantly increased from 10.5%to 12.9%)as compared to the baseline two-dimensional chalcogenide solar cell with undoped CuSCN,with the main reason for the improvement being the significant increase in short-circuit current density(from 16.7 to 18.3 mA/cm^(2))and fill factor(from 59.1%to 66.3%).The results indicate that CuSCN doping is favorable to improve the hole transport ability of PTAA and the photovoltaic conversion efficiency of 2D chalcogenide solar cells.