期刊文献+

湿度对功率半导体器件芯片焊料热阻的影响机理

The Influence Mechanism of Humidity on the Chip Solder Layer Thermal Resistance of Power Semiconductor Devices
下载PDF
导出
摘要 近年来,湿度对功率器件热特性的影响成已为热点话题。然而,功率器件芯片焊料热阻受湿度的影响尚未被试验证实,且影响机理仍不明确。该文基于试验测试、算例、仿真模型,首次提出湿度对功率器件芯片焊料热阻的影响机理。结果表明,湿度能入侵器件,并在两方面影响器件结-散热器瞬态热阻抗:(1)芯片焊料;(2)器件壳表面接触热阻。进一步地,探究芯片焊料的热容、密度、热导率受湿度影响机理,并结合算例可知,若水汽含量占芯片焊料层内物质总量的0.1%,芯片焊料的热容、密度、热导率将变化为原来的101.9%、100.0135%、91.4%。已校准热特性的仿真模型表明,焊料层热容的增大会导致焊料层热阻下降(整体热阻不变),焊料层热导率的减小会导致整个器件热阻上升,两种情况共同作用,影响实际户外应用工况下功率器件的工作寿命。 With the development of offshore wind power,photovoltaics,and electric vehicles(practical outdoor working conditions),the influence of humidity on power electronics’operation reliability has been emphasized.However,the influence mechanism of humidity on packaging reliability is still uncertain.Some literature found that the thermal impedance may be influenced by humidity and further affects the power cycling lifetime,but this phenomenon needs further verification and mechanism analysis.In this paper,the experiment is designed,and the influence mechanism of humidity on the thermal resistance of power electronics is proposed.The results indicate that moisture can invade DUT and cause transient thermal impedance Z_(th) variation in two aspects.One corresponds to the chip solder layer of DUTs,and the other corresponds to the case surface contact resistance of the DUTs.Furthermore,it is revealed that the thermal capacity,density,and conductivity are influenced by humidity,resulting in thermal impedance variation.Firstly,the information on the DUTs,the basic principle of transient thermal impedance Z_(th) measurements,the test platform,and the process are introduced.This paper uses three kinds of DUTs(TO-247 of SiC MOSFET,EasyPack of SiC MOSFET,and 34 mm Module of Si IGBT).EasyPack modules have no substrate,and 34 mm modules have a substrate.TO-247 devices and EasyPack modules only have a chip solder layer,while 34 mm modules also have a system solder layer,which can characterize the moisture absorption capacity at different layers.For the junction-heatsink transient thermal impedance(Z_(thjs))measurement of Si IGBT devices,the gate is fully turned on during the test.In contrast,for SiC MOSFET devices,the gate must be turned on to conduct the load current and turned off to ensure that the measurement current source entirely passes through the reverse body diode and the junction temperature is measured with V_(SD)(T).DUTs are placed in a constant temperature humidity chamber,and the gate driver circuit board,current source,and cooling system are placed outside.The experiment is performed at 85℃/85%RH storage for 722 hours with ten times Z_(thjs)measurements(the time interval between two Z_(thjs)measurements is 72 h),and the change between two adjacent Z_(thjs)is observed to evaluate the influence of humidity on thermal resistance.Then,the experimental results are discussed.Moisture can diffuse from the environment into the DUT,further leading to changes in the DUT’s Z_(thjs).All TO-247 devices,the Easy-4 module,and all 34 mm modules indicate a change in chip solder layer thermal resistance.Furthermore,the influence of humidity on the DUT’s Z_(thjs)comes from the thermal resistance of the chip solder inside the device and the contact thermal resistance of the device case surface.The copper substrate is corroded when long-time submerged in a high-humidity environment.Moreover,the influence mechanism is proposed.When moisture is 1‰of the solder content,the solder layer’s thermal capacity,density,and conductivity change to 101.9%,100.0135%,and 91.4%of the original values,respectively.With the increase of the chip solder layer’s thermal capacity,the solder layer’s thermal resistance in Z_(thjs)measurements decreases.Finally,the conclusion can be drawn:(1)Moisture can invade power electronics,resulting in thermal impedance variation for three kinds of DUTs.(2)The humidity can influence the chip solder layer when thermal resistance is changed by humidity and case surface when corrosion occurs in copper material.(3)The thermal characteristic between moisture and chip solder layer is different.The moisture invasion leads to an increase in thermal capacity and density,and a decrease in thermal conductivity,further influencing the power electronics’operation lifetime.It is the reason for Rth change at the chip solder layer.
作者 王延浩 邓二平 王作艺 李道会 黄永章 Wang Yanhao;Deng Erping;Wang Zuoyi;Li Daohui;Huang Yongzhang(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources,North China Electric Power University,Beijing,102206,China;School of Electric Engineering and Automation,Hefei University of Technology,Hefei,230009,China;NIO,Shanghai,201800,China)
出处 《电工技术学报》 EI CSCD 北大核心 2024年第12期3691-3704,共14页 Transactions of China Electrotechnical Society
基金 国家自然科学基金(52007061) 新能源电力系统国家重点实验室自主研究课题(LAPS202202)资助项目。
关键词 湿度 芯片焊料热阻 瞬态热阻抗 寿命 实际户外应用工况 Humidity chip solder layer thermal resistance transient thermal impedance lifetime practical outdoor working conditions
  • 相关文献

参考文献8

二级参考文献69

  • 1Chun-Jcn Weng. Advanced Thermal Enhancement and Management of LED Packages [J]. International Communications in Heat and Mass Transfer (S0735-1933), 2009, 36(3): 245-248.
  • 2Solid-State Lighting Research and Development: Manufacturing Roadmap [K]. USA: U S Department of Energy, July, 2011.
  • 3Jeroen Bielen, Jan-Joris Gommans, Frank Theunis. Prediction of High Cycle Fatigue in Aluminum Bond Wires: A Physics of Failure Approach Combining Experiments and Multi-physics Simulations [C]//Proc 7th EuroSirrtE, Como, April, 2006. USA: IEEE, 2006: 1-7.
  • 4Jianzheng Hu, Lianqiao Yang, Moo Whan Shin. Thermal Effects of Moisture Inducing Delamination in Light-Emitting Diode Packages [C]//Proc 56th ECTC, San Diego, CA, May, 2006. USA: IEEE, 2006 1957-1962.
  • 5Xiaobing Luo, Bulong Wu, Sheng Liu. Effects of Moist Environments on LED Module Reliability [J]. IEEE Transactions on Device and Materials Reliability (S1530-4388), 2010, 10(2): 182-186.
  • 6J P Holman,Heat Transfer[M].北京:中国机械出版社,2005:1-5.
  • 7Zhang G Q, van Driel, W D, Fan X J, et al. Mechanics of Microelectronics [M]. Dordrecht, Germany: Springer, 2006: 65-76.
  • 8Moon-Hwan Chang, Diganta Das, E V Varde, et al. Light Emitting Diodes Reliability Review [J]. Microelectronics Reliability (S0026-2714), 2012, 52(5): 762-782.
  • 9Zhaohui Chen, Qin Zhang, Kai Wang, et al. Fluid-solid Coupling Thermo-mechanical Analysis of High Power LED Package during Thermal Shock Testing [J]. Microelectronics Reliability (S0026-2714), 2012, 52(8): 1726-1734.
  • 10Roberto Faranda, Stefania Guzzetti, George Cristian Lazaroiu, et al. Refrigerating Liquid Prototype for LED's Thermal Management [J]. Applied Thermal Engineering (S1359-4311), 2012, 48(12): 155-163.

共引文献57

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部