基于PECVD的SiO_(2)薄膜制备研究进展

Research Progress on the Preparation of SiO_(2) Thin Films Based on PECVD

二氧化硅(SiO_(2))薄膜因其卓越的光学性能,在半导体器件、集成电路、光学涂层等领域具有巨大的应用潜力。然而,SiO_(2)薄膜制备过程中面临表面粗糙度、杂质控制和致密性等问题。为解决这些问题,研究者们通过工艺改进和表面修饰等手段来提高SiO_(2)薄膜的性能。在众多SiO_(2)薄膜制备技术中,等离子体增强化学气相沉积(Plasma-Enhanced Chemical Vapor Deposition,PECVD)技术由于沉积SiO_(2)薄膜所需温度低、原位生长等优势,成为制备SiO_(2)薄膜最常用的方法。综述了用PECVD技术制备SiO_(2)薄膜的发展历程,并探讨了关键工艺参数和后处理工艺对薄膜质量的影响。对PECVD技术的深入研究,有助于实现对SiO_(2)薄膜生长的更精准控制,进一步拓展其广泛的应用前景。

Silica(SiO_(2)) thin films have enormous potential for applications in semiconductor devices,integrated circuits,optical coatings,and other fields due to their excellent optical properties.However,the preparation process of SiO_(2) thin films faces some issues such as surface roughness,impurity control,and compactness.To address these issues,researchers have improved the performance of SiO_(2) thin films through process improvements and surface modifications.Among the many techniques for preparing SiO_(2) thin films,plasma enhanced chemical vapor deposition(PECVD)has become the most commonly used method for preparing SiO_(2) thin films due to its advantages such as low temperature required for deposition and in-situ growth.This article reviews the development of preparing SiO_(2) thin films using PECVD technology,and explores the influence of key process parameters and post-treatment processes on the quality of the films.The in-depth study of PECVD technology helps to achieve more precise control of SiO_(2) film growth and further expand its broad application prospects.