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Field induced Chern insulating states in twisted monolayer–bilayer graphene

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摘要 Unraveling the mechanism underlying topological phases, notably the Chern insulators(Ch Is) in strong correlated systems at the microscopy scale, has captivated significant research interest. Nonetheless, Ch Is harboring topological information have not always manifested themselves, owing to the constraints imposed by displacement fields in certain experimental configurations. In this study, we employ density-tuned scanning tunneling microscopy(DT-STM) to investigate the Ch Is in twisted monolayer–bilayer graphene(t MBG). At zero magnetic field, we observe correlated metallic states.While under a magnetic field, a metal–insulator transition happens and an integer Ch I is formed emanating from the filling index s = 3 with a Chern number C = 1. Our results underscore the pivotal role of magnetic fields as a powerful probe for elucidating topological phases in twisted Van der Waals heterostructures.
作者 王政文 韩英卓 Kenji Watanabe Takashi Taniguchi 姜宇航 毛金海 Zhengwen Wang;Yingzhuo Han;Kenji Watanabe;Takashi Taniguchi;Yuhang Jiang;Jinhai Mao(School of Physical Science and CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100049,China;College of Materials Science and Optoelectronic Technology,Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Advanced Materials Laboratory,National Institute for Materials Science,Tsukuba 305-0044,Japan)
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第6期69-73,共5页 中国物理B(英文版)
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