Low TCR-MIM氮化钽极板制备及其性能研究

Study on Preparation and Properties of Low TCR-MIM Tantalum Nitride Plate

阐述TCR-MIM结构具有更好的稳定性、精度和可调性,适用于高精度、高稳定性的场景。通过研究沉积次数、溅射功率和N2流量对氮化钽(TaN)极板及MIM性能的影响,获得一种Low TCR TaN作为MIM结构底部极板。当沉积2次,保持基准功率,N_(2)流量约为基准流量1.2倍时,MIM结构TCR达到2ppm/℃,MIM结构可靠性测试通过,获得一种优异的低温度漂移系数TaN极板,有利于高性能MIM电容的制备。

This paper describes that TCR MIM structure has better stability,accuracy and adjustability,and is suitable for high-precision and high-stability application scenarios.The effects of deposition times,sputtering power and N_(2) flow rate on the performance of tantalum nitride(TaN)electrode plate and MIM are studied,and a Low TCR TaN as the bottom plate of MIM structure is obtained.Then the base power is maintained and the N2 flow rate is about 1.2 times the base flow rate,the TRC of MIM structure reached at 2ppm/℃,the MIM structural reliability test is passed,and an excellent TaN plate with low temperature drift coefficient is obtained,which is conductive to the preparation of high-performance MIM capacitors.