摘要
在氧化镓(Ga_(2)O_(3))材料p型掺杂困难的背景下,Ga_(2)O_(3)p-n异质结器件在氧化镓器件的应用中起着重要作用.因此,寻找一种高效、经济的制备方法制备Ga_(2)O_(3)异质结对器件应用具有重要意义.在这项工作中,我们成功基于低成本、无真空的雾化学气相沉积(Mist-CVD)外延制备了单晶氧化镍(NiO)和β-Ga_(2)O_(3)异质结.其中,NiO(111)和β-Ga_(2)O_(3)(-201)的XRD摇摆曲线半高宽分别为0.077°和0.807°.NiO与β-Ga_(2)O_(3)之间的能带表现为Ⅱ型异质结构.基于此异质结,我们制备了准垂直器件,器件具有明显的p-n结整流特性,反向击穿电压为117 V.本工作为β-Ga_(2)O_(3)异质p-n结的制备提供了一种低成本、高质量的方法.
Gallium oxide(Ga_(2)O_(3))p-n heterojunctions play an important role in addressing the difficulties in Ga_(2)O_(3)p-type doping.Therefore,an efficient and economical fabrication method needs to be established to create single-crystal Ga_(2)O_(3)heterojunctions for device applications.In this work,we successfully achieved epitaxial growth of single-crystal nickel oxide(NiO)andβ-Ga_(2)O_(3)heterojunctions based on the low-cost and vacuum-free mist chemical-vapor deposition.The full width at half maximum of the X-ray diffraction rocking curves of NiO(111)andβ-Ga_(2)O_(3)(-201)reached 0.077°and 0.807°,respectively.The energy band between NiO andβ-Ga_(2)O_(3)has a Type II heterojunction.Finally,we prepared a quasi-vertical diode based on the NiO/β-Ga_(2)O_(3)heterojunction,which exhibits obvious rectification characteristics of the p-n junction and provides a reverse breakdown voltage of 117 V.This work proposes a low-cost fabrication method forβ-Ga_(2)O_(3)p-n heterojunctions.
作者
张泽雨林
宋庆文
刘丁赫
闫奕如
陈昊
穆昌根
陈大正
冯倩
张进成
张玉明
郝跃
张春福
Zeyulin Zhang;Qingwen Song;Dinghe Liu;Yiru Yan;Hao Chen;Changgen Mu;Dazheng Chen;Qian Feng;Jincheng Zhang;Yuming Zhang;Yue Hao;Chunfu Zhang(National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology,School of Microelectronics,Xidian University,Xi’an,710071,China)
基金
supported by the National Key R&D Program of China(2022YFB3605402 and 2021YFB3601800)
the Fundamental Research Funds for the Central Universities
the National Natural Science Foundation of China(62274132,62004151,62274126,and 62174123)
the Natural Science Basic Research Program of Shaanxi(2021JC24)
the Innovation Capability Support Program of Shaanxi(2021TD-04)
Wuhu and Xidian University Special Fund for Industry-university-research Cooperation(XWYCXY-012021001 and XWYCXY-012021006)。