对位芳纶导电纸的制备与性能表征

Preparation and characterization of para-aramid conductive paper

利用短切对位芳纶纤维制备对位芳纶原纸,并对原纸进行导电整理制成对位芳纶导电纸。实验结果表明:芳纶原纸分子结构保持了对位芳纶纤维的分子结构特征,但其结晶度降为57.37%;700℃时,对位芳纶原纸的质量残存率为35%左右,相比短切对位芳纶纤维,其热学性能、结晶度均有所下降;当氧化石墨烯在导电整理剂中的占比为8%时,对位芳纶导电纸表面电阻为200Ω/m^(2)左右,验证了用该工艺制备兼具热学性能与电学性能的对位芳纶导电纸的可行性。

Para-aramid base paper was prepared by using short-cut para-aramid fiber and its conductive finishing was carried out.The test results showed that the molecular structure of hot-pressed para-aramid base paper was maintained with para-aramid fibers and the crystallinity was reduced to 57.37%.At 700℃,the mass retention rate of hot-pressed para-aramid base paper was about 35%.Compared with the short-cut para-aramid fibers,the thermal properties and crystallinity were lower,but still at a higher level.When the proportion of graphene oxide in the conductive finishing agent was 8%,the surface resistance of para-aramid conductive papers was about 200Ω/m 2.It was verified that it was the feasibility of preparing para-aramid conductive papers with both thermal and electrical properties through this process.