摘要
ZnO具有光催化活性强、稳定性高等优点,然而,ZnO禁带宽度大,只能吸收紫外光,太阳能利用率低;且其光生电子易与空穴复合,量子效率低。g-C3N4是一种窄带隙半导体,与ZnO复合形成异质结,不仅可以提高太阳光利用率,而且能加快载流子转移,提高光催化性能。通过文献研究综述了g-C3N4/ZnO复合光催化剂的四种复合形式,以及g-C3N4、ZnO与其他物质复合而成的三元、四元复合材料,并对g-C3N4/ZnO复合光催化剂的未来发展方向进行了展望。
ZnO has the advantages of strong photocatalytic activity and high thermal stability.However,because of its large band gap,ZnO can only absorb ultraviolet light,and its solar energy utilization rate is low;And its photo generated electrons are easy to recombine with holes,resulting in low quantum efficiency.g-C 3N 4 is a narrow band gap semiconductor that combines with ZnO to form a heterojunction,which not only improves solar light utilization but also accelerates carrier transfer and improves photocatalytic performance.This article mainly reviews the four composite forms of g-C 3N 4/ZnO composite photocatalysts,as well as the ternary and quaternary composite materials composed of g-C 3N 4/ZnO with other substances,and prospects the future development direction of g-C 3N 4/ZnO composite photocatalysts.
作者
赵一民
彭敬
吕玉莹
陈款
段成杰
卜俊方
郑兴芳
Zhao Yimin;Peng Jing;Lyu Yuying;Chen Kuan;Duan Chengjie;Bu Junfang;Zheng Xingfang(College of Chemistry and Chemical Engineering,Linyi University,Linyi 276000,China)
出处
《云南化工》
CAS
2024年第6期22-26,共5页
Yunnan Chemical Technology
基金
临沂大学大学生创新创业训练计划项目(X202310452484)
临沂大学教改项目(JG2022M32)。