摘要
In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.
作者
宋双
梁会力
霍文星
张广
张永晖
王绩伟
梅增霞
Shuang Song;Huili Liang;Wenxing Huo;Guang Zhang;Yonghui Zhang;Jiwei Wang;Zengxia Mei(Songshan Lake Materials Laboratory,Dongguan 523808,China;Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;College of Physics,Liaoning University,Shenyang 110036,China;Department of Instruments Science and Technology,School of Precision Instrument and Opto-electronics Engineering,Tianjin University,Tianjin 300072,China;National Key Laboratory of Scattering and Radiation,Beijing 100039,China;School of Physics and Optoelectronic Engineering,Shandong University of Technology,Zibo 255000,China)
基金
supported by the National Natural Science Foundation of China(Grant Nos.62174113,12174275,and 61874139)
the Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2019B1515120057,2023A1515140094,and 2023A1515110730)。