偏置电压和温度对22 nm FDSOI器件单粒子瞬态的影响研究

Bias voltage and temperature dependence of single-event transient in 22 nm FDSOI devices

针对22 nm FDSOI工艺在辐射环境下的单粒子瞬态问题,基于Sentaurus TCAD仿真工具对22 nm FDSOI NMOS进行建模,仿真研究了22 nm FDSOI NMOS的单粒子瞬态敏感区域,以及不同偏置电压和工作温度对单粒子瞬态的影响机理。仿真结果表明,22 nm FDSOI NMOS的敏感区域为体区和靠近体区的LDD区域;随着偏置电压的升高,漏端总收集电荷逐渐增大,漏端瞬态脉冲电流的脉冲宽度逐渐减小;相较于偏置电压对单粒子瞬态的影响,工作温度对22 nm FDSOI NMOS单粒子瞬态的影响并不明显。

In order to investigate single-event transient(SET)of 22 nm FDSOI technology,we have built a FDSOI NMOS model based on Sentaurus TCAD and carried out various SET simulations in 22nm FDSOI NMOS.The sensitive region,bias voltage and temperature dependence of SET in 22 nm FDSOI NMOS have been examined.The simulation results show that the sensitive regions in 22 nm FDSOI NMOS are the body region and LDD region near the body region.As the bias voltage increases,the total collected charge is increasing,and the width of drain transient pulse current is declining.Compared to the bias voltage,the effect of operating temperature on SET in 22 nm FDSOI NMOS is not significant.