Ka波段连续波9 W GaN功率放大器

Ka band CW 9 W GaN Power Amplifier

本文研制了一款采用0.15μm碳化硅基氮化镓功率MMIC工艺的Ka波段连续波功率放大器芯片。功率放大器采用了3级共源级联结构。输出级采用了16个晶体管进行功率合成,有效地分散了热分布,输出匹配网络采用低损耗拓扑架构,保证了输出功率与附加效率。级间匹配采用了最大增益匹配,同时兼顾了小信号增益平坦度。在28 GHz~30 GHz内,小信号增益为25 dB,28 V偏置电压下连续波输出功率大于39 dBm,功率增益为17 dB,附加效率大于25%,热阻为1.41℃/W。输出功率为35 dBm时,IMD 3小于-25 dBc,芯片面积为3.0 mm×3.1 mm。

A Ka-band continuous wave power amplifier chip is developed by utilizing 0.15μm Gallium Nitride power MMIC technology manufactured on silicon carbide substrates.The amplifier is designed by adopting a three-stage common source cascade structure.The 16 transistors are used for power combing,which can disperse the heat distribution.To improve output power and added efficiency,the output matching circuit is optimized by a low loss topology.The maximum gain matching is adopted for inter-stage matching,and the small signal gain flatness is also taken into account.In 28 GHz~30 GHz,the small signal gain is 25 dB,the continuous wave output power at 28 V bias voltage is greater than 39 dBm,the power gain is 17 dB,the additional efficiency is greater than 25%and the thermal resistance is 1.41℃/W.When the output power is 35 dBm,the IMD 3 is less than-23 dBc,and the chip size is 3.0 mm×3.1 mm.