四层插入层量子垒AlGaN深紫外LED研究

Study of AlGaN Deep Ultraviolet LED with Four-layer Insertion Layer Quantum Barrier

本文通过对不同量子垒结构的AlGaN深紫外LED进行数值研究,对比分析了量子垒结构与其发光性能之间的关联.结果表明,相较于传统量子垒结构的样品A,四层插入层量子垒结构的样品B和样品C,内量子效率峰值分别提升了27.04%和18.8%,光输出功率在200 mA下分别提升了31.04%和21.62%.这主要是因为四层插入层量子垒结构可有效增加有源区内量子垒的能带势垒高度,提升量子阱对载流子的束缚能力.

In this paper,the relationship between the quantum barrier structure and its optical performance is compared and analyzed by numerical research on AlGaN deep ultraviolet LEDs with different quantum barrier structures.The results show that compared with the Sample A of a traditional quantum barrier structure,the peak internal quantum efficiency of Sample B and Sample C of the four-layer insertion layer quantum barrier structure is increased by 27.04%and 18.8%,respectively,and the light output power is increased by 31.04%and 21.62%at 200 mA,respectively.This is mainly because the four-layer insertion layer quantum barrier structure can effectively increase the energy band barrier height of the quantum barrier in the active region and improve the ability of quantum wells to bind carriers.