摘要
六方氮化硼是一种中子敏感材料。介绍了使用低压气相化学沉积在1673K下以大约20μm/h的生长速率制备了高质量203μm厚的六方氮化硼。在氮化硼的两侧沉积厚度为100nm的金电极,制备了垂直结构的六方氮化硼中子探测器。该器件的电学性质表明制备的六方氮化硼材料的迁移率寿命的乘积(μτ)为2.8×10^(-6)cm^(2)/V,电阻率为1.5×10^(14)Ω·cm。在850V电压下,该探测器对热中子的探测效率为34.5%,电荷收集效率为60%。
In this study,we prepare a high-quality 203μm-thick hexagonal boron nitride(h-BN)(which is neuron-sensitive)using low-pressure chemical vapor deposition at 1673 K,achieving a growth rate of approximately 20μm/h.We fabricate h-BN neutron detectors with vertical structures by depositing 100nm-thick Au electrodes on both sides of h-BN.Our electrical transport measurement results show that the prepared h-BN material possesses a mobility-life product(μτ)and resistivity of 2.8×10^(-6)cm^(2)/V and 1.5×10^(14)Ω·cm,respectively.The neutron detector based on the 203μm-thick h-BN exhibits neutron detection and charge collection efficiencies of 34.5%and 60%,respectively,at 850V when irradiated by thermal neutrons from Am-Be sources.
作者
刘敬润
曹炎
刘晓航
范盛达
王帅
陈曦
刘洪涛
刘艳成
赵江滨
何高魁
陈占国
LIU Jingrun;CAO Yan;LIU Xiaohang;FAN Shengda;WANG Shuai;CHEN Xi;LIU Hongtao;LIU Yancheng;ZHAO Jiangbin;HE Gaokui;CHEN Zhanguo(State Key Lab.of Integrated Optoelectronics,College of Electronic Science and Engin.,Jilin University,Changchun 130012,CHN;Shanghai Institute of Appl.Phys.,Shanghai 201800,CHN;Dept.of Nuclear Technology and Application,China Institute of Atomic Energy,Beijing 102413,CHN;School of Physics,Changchun University of Science and Technology,Changchun 130022,CHN;University of Chinese Academy of Sciences,Beijing 100049,CHN)
出处
《半导体光电》
CAS
北大核心
2024年第3期415-419,共5页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(62174066,62275098,62304026,20230101343JC).
关键词
宽禁带半导体
六方氮化硼
中子探测
低压气相化学沉积
深紫外光电探测器
wide-bandgap semiconductor
hexagonal boron nitride
neutron detection
low pressure chemical vapor deposition
deep ultraviolet photodetector
