摘要
In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.
基金
supported by the National Natural Science Foundation of China(Grant No.1237310)
The Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020321)
the National Natural Science Foundation of China(Grant No.92163204)
The Key Research and Development Program of Jiangsu Province(Grant No.BE2022057-1)。