摘要
为了研究AlGaN/GaN高电子迁移率晶体管(High-Electron-Mobility Transistor,HEMT)外差探测器应用于太赫兹来波方向(Direction of Arrival,DOA)估计领域的可行性及量化性能指标,基于AlGaN/GaN HEMT 243GHz外差探测器搭建了太赫兹波线阵列矢量探测系统,实现了太赫兹连续波的相位分布和来波方向的测量。该系统的核心器件为准光-波导耦合的太赫兹外差探测器线阵列组件,阵元平均噪声等效功率(Noise-Equivalent-Power,NEP)为-123.89dBm/Hz。通过测试,表明该系统相位解析稳定度优于0.6°,线阵列组件法线(阵列芯片的垂线)方向左右11°以内的太赫兹来波方向的检测误差小于0.25°。讨论了存在误差的原因及可能的解决方案,为后续基于AlGaN/GaN HEMT面阵列的太赫兹相控阵雷达及定向通信系统的研制提供了基础。
Objective To investigate the feasibility and quantify performance metrics of AlGaN/GaN high-electron-mobility transistor(HEMT)heterodyne detectors in the domain of terahertz direction of arrival(DOA)estimation,this study benefits from the high bandwidth and resolution characteristics of terahertz waves,as well as the process consistency and scalability of AlGaN/GaN high-electron-mobility transistor terahertz heterodyne mixers.A 243 GHz linear array vector detection system based on these mixers was designed and constructed,characterizing its various performance attributes.Methods This paper establishes a 243 GHz linear array vector detection system based on an AlGaN/GaN HEMT mixer linear array(Fig.1(a)).The transmitted terahertz waves to be measured are collimated by an off-axis parabolic mirror(OAP).The receiver uses a high-speed multi-channel ADC array to collect signals from the mixer array,which have been amplified by an intermediate frequency signal amplifier,for processing in the higher-level computer.The processing flow(Fig.2(b))includes amplitude and phase resolution,calibration,and beamforming.Results and Discussions Testing demonstrates that the system's phase resolution stability is superior to 0.6°,with this error primarily stemming from the phase noise of the microwave source.Future use of a microwave source with lower phase noise and increasing the frequency of the system's intermediate frequency signal for heterodyne detection could further reduce this error.The system exhibits a phase distribution detection relative error of less than 3.6%,attributed to minor discrepancies introduced during the patch assembly of each channel's mixer.Employing more precise assembly techniques in the future could decrease this error.The system's error in detecting terahertz waves arriving from±11°of the normal direction is less than 0.25°,and the normalized level of the first sidelobe is around−3 dB,due to variations in the response consistency of each channel's mixer.Enhancing the consistency of mixers across channels or increasing the number of elements on the linear array could further reduce sidelobe levels and improve the accuracy of direction of arrival detection.The system's field of view reaches 22°,a result of the current 3 mm spacing between linear array elements leading to insufficient spatial sampling rates for terahertz waves and a limited field of view constrained by the 3 mm superhemispherical silicon lens used to couple the measured terahertz waves.Future efforts will focus on reducing the spacing between linear array elements and adopting a more optimal coupling method for the measured terahertz waves to enhance the overall field of view of the system.Conclusions This paper establishes a 243 GHz terahertz linear array vector detection system characterized by high phase resolution stability and low error in the direction of arrival detection.By comparing test results with simulation outcomes,it was found that the system's phase distribution detection error is less than 3.6%,the error in detecting terahertz wave direction of arrival within±11°of the normal direction is less than 0.25°,and the field of view reaches 22°.These results validate the feasibility of applying AlGaN/GaN HEMT heterodyne detector linear array components in the field of terahertz DOA estimation.This lays the groundwork for the subsequent development of terahertz phased array radars and directional communication systems with larger fields of view and smaller system sizes.
作者
王凯出
丁青峰
周奇
蔡昕航
张金峰
朱凯强
翟振钧
孙厚军
王林军
秦华
WANG Kaichu;DING Qingfeng;ZHOU Qi;CAI Xinhang;ZHANG Jinfeng;ZHU Kaiqiang;ZHAI Zhenjun;SUN Houjun;WANG Linjun;QIN Hua(School of Materials Science and Engineering,Shanghai University,Shanghai 200444,China;Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China;School of Physical Science and Technology,Shanghai Tech University,Shanghai 201210,China;School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China;School of Integrated Circuits and Electronics,Beijing Institute of Technology,Beijing 100081,China)
出处
《红外与激光工程》
EI
CSCD
北大核心
2024年第6期166-175,共10页
Infrared and Laser Engineering
基金
国家自然科学基金项目(61975227,61771466,61775231)
江苏省重点研发计划项目(BE2018005)
中国科学院青年创新促进会(2017372)。