摘要
提出了一种可在高频下工作的浮动型忆阻器电路,该电路由交叉耦合的运算跨导放大器、浮动电流源、接地电容与接地电阻组成,通过使用带交叉耦合的OTA来提高工作频率范围;浮动忆阻器通过翻转输入端口实现在增量和减量的两种状态中进行切换。所提电路基于SMIC 180 nm CMOS工艺设计实现,采用±0.9 V的双电源供电,忆阻器的最大工作频率可达到100 MHz,功耗仅为0.496 m W。
This paper presents a floating memristor circuit that can operate at high frequencies,which consists of a cross-coupled operational transconductance amplifier(OTA),a floating current source,and a ground capacitor with a grounding resistor.The memristor circuit improves the operating frequency range by using an OTA with cross-coupling;the floating memristor realizes switching between two states,incremental and decremental,by flipping the input port.The proposed circuit is based on the SMIC 180 nm CMOS process,and is powered by±0.9 V dual supplies.The maximum operating frequency of the memristor can reach 100 MHz with a power consumption of 0.496 m W.
作者
熊棚
于昕梅
XIONG Peng;YU Xinmei(School of Electronic Information Engineering,Foshan University,Foshan 528225,China)
出处
《佛山科学技术学院学报(自然科学版)》
CAS
2024年第4期19-26,共8页
Journal of Foshan University(Natural Science Edition)
基金
广东省普通高校重点实验室资助项目(2021KSYS008)。
关键词
忆阻器
CMOS集成电路
运算跨导放大器
浮动电流源
memristor
CMOS circuit
operational transconductance amplifier
floating current source