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高频双频Buck变换器平面集成磁件优化设计

Optimal design of planar integrated magnetics for high-frequency double-frequency Buck converter
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摘要 针对目前开关器件和磁性元件性能不足导致双频Buck变换器的效率和功率密度低的问题,研究了一种高效高功率密度的双频Buck变换器。变换器将工作在连续导通(CCM)模式,采用解耦合的平面集成电感器完成系统磁元件的集成,结合磁件的集成方法、有限的PCB层数和变换器的特性给出双频Buck变换器的参数,然后,提出了一种双频Buck变换器平面磁件的设计方法,并完成系统磁元件的优化设计。最后,基于第3代半导体SiC器件以及平面集成磁件,设计了额定功率200 W、开关频率400 kHz的双频Buck变换器。结果表明:该变换器峰值效率将达到96.1%,功率密度为46.1 W/in^(3)(1 in=25.4 mm),验证了双频Buck变换器设计方法的正确性和有效性。 In order to solve the problem that the efficiency and power density of double frequency Buck converters are still relatively low,which are caused by insufficient switching devices and magnetic components,a double-frequency Buck converter with high efficiency and high power density is proposed.Converter will work in CCM mode,using decoupled planar integrated inductors to complete the integration of the magnetic components of the system.Combined with the integration method of magnetic components,the limited number of PCB layers and the characteristics of the converter,the parameters of the double frequency Buck converter are given.Then,a design method of planar magnetic components is proposed,and the optimal design of the magnetic components of the system is completed.Finally,based on the third-generation semiconductor SiC devices and planar integrated magnetic components,a double-frequency Buck converter with a rated power of 200 W and the switch frequency of 400 kHz is designed.The results show that the peak efficiency of the converster will reach 96.1%,and the power density will be 46.1 W/in^(3)(1 in=25.4 mm).These confirm the correctness and effectiveness of the double-frequency Buck converter design method.
作者 高圣伟 于冠恒 赵虹宇 GAO Shengwei;YU Guanheng;ZHAO Hongyu(Tianjin Key Laboratory of Intelligent Control of Electrical Equipment,Tiangong University,Tianjin 300387,China)
出处 《天津工业大学学报》 CAS 北大核心 2024年第3期66-74,共9页 Journal of Tiangong University
基金 天津市科技计划项目(20YDTPJC01520)。
关键词 双频BUCK变换器 平面磁件 高频高效高功率密度 SIC器件 double frequency Buck converter planar magnetics high frequency,high efficiency and high power density SiC devices
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