具有高对称性可重构整流的单栅PdSe_(2)/WS_(2)二极管

Reconfigurable single-gate PdSe_(2)/WS_(2) diode with high symmetry rectification

二维材料由于其丰富的材料组合和可调节的能带结构,为构建可重构的电子器件提供了绝佳的机会.本文使用PdSe_(2)/WS_(2)范德瓦尔斯平面结构造了具有高对称性p-n/n-p结模式的单栅极可重构二极管.栅极调制的带-带隧穿机制为反向整流提供了与正偏同等的电流,同时器件通过控制双极性的WS_(2)构成同质n-p结实现了高反向整流比.通过栅压调制,器件的p-n/n-p结模式能够形成高度对称,整流比具有1E−04到1E+04的无极调节能力,器件因此显示出高性能的可重构整流功能.我们也基于双模整流功能构建了逻辑反相器.本工作有助于拓展二维材料多功能器件的研究.

Two-dimensional(2D)materials offer an excellent opportunity for constructing reconfigurable electronic devices due to their wide range of material combinations and adjustable band structures.In this study,we successfully develop a single-gate controllable reconfigurable diode employing PdSe_(2)/WS_(2) van der Waals heterostructures to form a highly symmetric p-n/n-p junction mode.By utilizing a gatemodulated band-to-band tunneling mechanism,we achieve a reverse bias tunneling current equivalent to the forward bias current of the device.Moreover,we obtain a high reverse rectification ratio by controlling the bipolar WS_(2) to form a homogeneous n-p junction.By modulating the gate voltage,the device’s p-n/n-p junction mode exhibits remarkably symmetric properties,with adjustable rectification ratios ranging from 1E−04 to 1E+04,thus demonstrating its high-performance reconfigurable rectification functionality.Furthermore,a logic inverter is successfully constructed based on the dual-mode rectification ability.This research significantly contributes to the advancement of multifunctional devices utilizing 2D materials.