基于磁控溅射法制备的大面积高质量硒化铂薄膜及其在红外探测中的应用

Large-scale fabrication of high-quality PtSe_(2) film via magnetron sputtering for NIR detection

PtSe_(2)因其可调的带隙、高载流子迁移率和较高的光吸收率在红外探测领域受到广泛的研究和关注.然而,传统的制备方法存在生长条件复杂、生长时间长、铂源和硒源的选择性较低、晶体质量不高、成本昂贵以及大规模制造困难等缺点,限制了其实际应用.在此,我们采用了一种便捷、低成本的磁控共溅射法来制备大面积、高质量的PtSe_(2)薄膜.在不同温度下生长的薄膜的表面形貌和微观结构表征结果表明,我们制备的PtSe_(2)薄膜具有良好的结晶性、可控性、均匀性、较窄带隙和优异的红外波段吸收特性,同时我们还研究了最合适的衬底和生长温度.基于PtSe_(2)的光电探测器展示出良好的红外探测能力和较快的响应速度.尤其值得注意的是,相比于传统制备方法,本研究提出的制备方法的制备时间非常短,为PtSe_(2)大规模应用于下一代红外探测,并与现有的硅技术兼容提供了有益的指导.

PtSe_(2) has received extensive research attention in infrared(IR)detection owing to its tunable bandgap,high carrier mobility and efficient optical absorption.However,traditional preparation methods are characterized by complicated growth conditions,lengthy processing times,limited Pt and Se source selectivity,subpar crystal quality,and challenges in large-scale fabrication,which impede their practical applications.Here,a convenient magnetron co-sputtering method was employed to fabricate large-area,high-quality PtSe_(2) films.The characterizations of the phase,microstructure,morphology and films grown at different temperatures reveal good crystallinity,controllability,homogeneity,flat surface morphology,narrow bandgap and excellent IR absorption of the PtSe_(2) films.Furthermore,we investigated the optimal substrates and growth temperatures.The PtSe_(2)-based photodetectors show fast response time and reasonable responsivity.The short preparation time demonstrates the potential for large-scale applications of PtSe_(2) in next generation IR detection systems compatible with established Si technologies.