摘要
We conduct a detailed examination of the magnetic and electrical transport properties in GdAlSi and SmAlGe crystals,which possess a LaPtSi-type structure(space group I4_(1)md).The magnetic susceptibility data unambiguously reveal magnetic ordering below a characteristic transition temperature(T_(N)).For GdAlSi,a hysteresis loop is observed in the magnetization and magnetoresistance curves within the ab plane when the magnetic field is applied below T_(N),which is around32 K.Notable specific heat anomalies are detected at 32 K for GdAlSi and 6 K for SmAlGe,confirming the occurrence of magnetic transitions.In addition,the extracted magnetic entropy at high temperatures is consistent with the theoretical value of Rln(2J+1) for J=7/2 in Gd^(3+) and J=5/2 in Sm^(3+),respectively.SmAlGe also exhibits Schottky-like specific heat contributions.Additionally,both GdAlSi and SmAlGe exhibit positive magnetoresistance and a normal Hall effect.
作者
巩静
王欢
马小平
曾祥雨
林浚发
韩坤
王乙婷
夏天龙
Jing Gong;Huan Wang;Xiao-Ping Ma;Xiang-Yu Zeng;Jun-Fa Lin;Kun Han;Yi-Ting Wang;and Tian-Long(Department of Physics,Renmin University of China,Beijing 100872,China;Beijing Key Laboratory of Opto-electronic Functional Materials&Micro-nano Devices,Renmin University of China,Beijing 100872,China;Key Laboratory of Quantum State Construction and Manipulation(Ministry of Education),Renmin University of China,Beijing 100872,China;Laboratory for Neutron Scattering,Renmin University of China,Beijing 100872,China)
基金
supported by the National Natural Science Foundation of China(Grant No.12074425)
the National Key R&D Program of China(Grant No.2019YFA0308602)
the Fundamental Research Funds for the Central Universities
the Research Funds of Renmin University of China(Grant No.23XNKJ22)。
