化学机械抛光中摩擦润滑与化学行为研究进展

A review of research on friction lubrication and chemical behavior in chemical mechanical polishing

从三个方面对化学机械抛光(CMP)过程中摩擦与化学行为的研究进行了综述,其主要分为:关于抛光液中化学组分影响晶圆摩擦润滑状态的实验研究、CMP过程中抛光液组分与晶圆表面材料反应的分子动力学和反应力场分子动力学模拟研究、同时考虑摩擦润滑与化学反应的CMP材料去除速率模型。针对CMP过程中机械与化学协同作用的机理研究尚不明确,考虑机械摩擦与化学反应协同作用是未来完善CMP理论框架的重要研究方向之一。

The research on friction and chemical behavior in CMP process is reviewed.The relevant articles are mainly divided into three aspects:Experimental study on the effect of chemical components in polishing fluid on the tribological lubrication state of wafer,molecular dynamics simulation of the reaction between polishing fluid components and wafer surface materials in CMP process and molecular dynamics simulation of reaction force field,CMP material removal rate model considering both tribological lubrication and chemical reaction.The mechanism of mechanical and chemical synergies in CMP process is still unclear,considering the synergies between mechanical friction and chemical reaction is one of the important research directions to improve the theoretical framework of CMP in the future.