期刊文献+

某集成电路工厂废水站通风系统设计

Design of Ventilation System for a Wastewater Station of an Integrated Circuit Factory
下载PDF
导出
摘要 文中以某集成电路工厂废水站通风系统设计为例,分析污染物在操作车间的分布情况后,从通风形式选择、风量计算、通风机选型以及气流组织设计等方面论述了该类型建筑通风系统设计,对产生大量污染物且排风条件较不利的污泥脱水机房通风系统的通风效果进行了模拟论证及评价。结果表明,气流组织合理的情况下,标准要求的换气次数12次/h可使室内空气品质保持良好,风口布置均匀的低污染物浓度区适合设置人员操作区。 The ventilation system design of a wastewater station in an integrated circuit factory is as an example.After analyzing the distribution of pollutants in the operating workshop,the ventilation system design of this type of building is discussed from the aspects of ventilation form se-lection,air volume calculation,fan selection,and airflow organization design.The ventilation effect of the sludge dewatering room ventilation system,which generates a large amount of pollutants and has unfavorable exhaust conditions,was simulated and evaluated.The results showed that under reasonable airflow organization,the standard requirement of ventilation rate as 12 times per hour can maintain good indoor air quali-ty,and a low pollutant concentration area with uniform air outlet layout is suitable for setting up a personnel operation area.
作者 张秋玲 Zhang Qiuling(China Building Material Test&Certification Group Xiamen Hongye Co.Ltd.,Xiamen,Fujian 361100)
出处 《江西建材》 2024年第4期287-288,293,共3页
关键词 集成电路工厂 废水站 通风系统 Integrated circuit factory Wastewater station Ventilation system
  • 相关文献

参考文献4

二级参考文献14

  • 1徐政,郑若成,何磊.亚微米/深亚微米的栅氧清洗技术[J].电子与封装,2003,3(3):36-39. 被引量:2
  • 2Kern W. Handbook of semiconductor wafer cleaning technology:science,technology and applications[M].New Jersey:Noyes Publication,1993.
  • 3Ohim T. Total room temperature wet cleaning for Si substrate surface[J].Journal of the Electrochemical Society,1996,(09):2957-2964.doi:10.1149/1.1837133.
  • 4Okumura H,Akane T,Tsubo Y. Comparison of conventional surface cleaning methods for Si molecular beam epitaxy[J].Journal of the Electrochemical Society,1997,(11):3765-3768.doi:10.1149/1.1838088.
  • 5李家值.半导体化学原理[M]北京:科学出版社,1980.
  • 6Maleville C,Moulin C,Delprat D. 12th International symposium on Silicon-on-Insulator technology and devices[J].Journal of the Electrochemical Society,2005,(03):357.
  • 7Inomata C R,Ogawa H,Ish ikawa K. Infrared spectroscopy study of chemical oxides formed by asequcnce of RCA standard cleaning treatments[J].Journal of the Electrochemical Society,1996,(09):2995-3009.
  • 8Shwartzman S,Mayer A,Kern W. Megasonic particle removal from solid state wafers[J].RCA Review,1985.81-105.
  • 9Wu Y,Franklin C,Bran M. Acoustic property characterization of a single wafer megasonic cleaner[J].Semiconductor Fabtech,1999.177.
  • 10Skidmorek. Cleaning techniques for wafer surfaces[J].Semiconductor intpl,1987.80.

共引文献11

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部