一种基于汉明码纠错的高可靠存储系统设计

Design of a High-Reliability Storage System Based on Hamming Code Error Correction

为提高片上存储的可靠性,设计了一种基于汉明码纠错的高可靠存储系统。该电路包括检错纠错(ECC)寄存器模块和ECC_CTRL模块。CPU可通过高级高性能总线(AHB)配置ECC寄存器以实现相应功能,SRAM和Flash的读写数据则通过ECC_CTRL模块进行校验码的生成和数据的检错纠错。仿真结果表明,该高可靠存储系统能够检测单bit和双bit错误,纠正单bit错误,提高数据存储的可靠性,同时可将发生错误的数据和地址锁存在寄存器中,以免用户访问发生错误的地址。

In order to enhance the reliability of on-chip storage,a high-reliability storage system based on Hamming code error correction is designed.This circuit is composed of an error detection and correction(ECC)register module and an ECC_CTRL module.The CPU can configure ECC registers through the advanced high-performance bus(AHB)to implement corresponding functions.The read and write data of SRAM and Flash is processed through the ECC_CTRL module for check code generation and data error detection and correction.Simulation results demonstrate that this high-reliability storage system can detect single-bit and double-bit errors,and correct single-bit errors,thereby improving the reliability of data storage.At the same time,this circuit can lock erroneous data and addresses into registers,preventing users from accessing erroneous addresses.