A High-Performance MoS_(2)-Based Visible-Near-Infrared Photodetector from Gateless Photogating Effect Induced by Nickel Nanoparticles

Recent advancements in two-dimensional materials have shown huge potential for optoelectronic applications.It is challenging to achieve highly effective and sensitive broadband photodetection based on MoS_(2)devices.Defect engineering,such as introducing vacancies,can narrow the bandgap and boost the separation of photogenerated carriers by defect states but leads to a slow response speed.Herein,we propose a nickel nanoparticle-induced gateless photogating effect with a unique energy band structure to enable the application of defect engineering and achieve high optoelectronic performance.The device based on Ni nanoparticle-decorated MoS_(2)with S vacancies exhibited high responsivities of 106.21 and 1.38 A W^(-1)and detectivities of 1.9×10^(12)and 8.9×10^(9)Jones under 532 and 980 nm illumination(visible to near infrared),respectively,with highly accelerated response speed.This strategy provides new insight into optimizing defect engineering to design high-performance optoelectronic devices capable of broadband photodetection.