基于有限元法的半桥IGBT混合模块的可靠性分析与优化设计

Reliability Analysis and Optimal Design of Half-bridge IGBT Hybrid Module Based on Finite Element Method

为了避免过高的温度和热应力使IGBT模块内部材料疲劳失效,建立了硅基IGBT与碳化硅基JBS组成的半桥IGBT混合模块的有限元仿真模型,通过改变芯片排列位置、各层结构的厚度,以及焊料和陶瓷基板的材质,研究模块结温及最大热应力变化规律,并对模块封装结构进行优化。优化后模块的结温与最大热应力分别下降18℃和80.2 MPa,提高了模块的可靠性。

To avoid fatigue and failure within the module caused by excessive temperature and thermal stress,a finite element simulation model of half-bridge IGBT hybrid module composed of silicon-based IGBT and silicon carbide-based JBS was established.The chip arrangement,the thickness of each layer structure,and the materials of solder and ceramic substrate were changed to study the rules of junction temperature and maximum thermal stress changes,and optimization methods for module packaging were proposed.After the optimization,the junction temperature and maximum thermal stress of the optimized module decreased by 18℃and 80.2 MPa,respectively,which enhanced the reliability of the module.