场效应晶体管太赫兹探测器在太赫兹成像领域的研究进展(上)

Research Progress of Field Effect Transistor Terahertz Detector in Terahertz Imaging(Ⅰ)

太赫兹(Terahertz,THz)波具有能量低、穿透性强、分辨率高等特性,因而THz成像技术在安全检测、医学诊断、无损探伤等领域具有广阔的应用前景。THz探测器作为THz成像系统的重要组成部分,其性能对成像分辨率、成像速度等有重要影响。由于具备可室温工作、易大面积集成、响应速度快等特性,场效应晶体管(Field Effect Transistor,FET)THz探测器在成像应用中潜力巨大。综述了近年来FET THz探测器在THz成像领域的研究进展(包括成像阵列、材料选择等方面),分析了设计和制造中存在的问题;指出天线和像素间距是限制大规模阵列化的重要因素,并在此基础上对未来的研究方向进行了展望;指出新的材料和结构设计将进一步改善器件性能,从而实现更快速、更清晰的THz成像。

Terahertz(THz)waves have characteristics such as low energy,strong penetration,and high resolution.Therefore,THz imaging technology has broad prospects in areas such as security inspection,medical diagnosis,and non-destructive testing.As an important component of THz imaging systems,the performance of THz detectors has a significant impact on imaging resolution and speed.Field effect transistor(FET)THz detectors,due to their characteristics of room temperature operation,easy large-scale integration,and fast response speed,have enormous potential in imaging applications.This paper reviews the research progress of FET THz detectors in the field of THz imaging in recent years,including advances in imaging arrays,material selection,and analysis of existing design and manufacturing issues.It points out that the antenna and pixel spacing are important factors limiting large-scale arraying.Based on this,it provides an outlook on future research directions,indicating that new materials and structural designs will further improve device performance,achieving faster and clearer THz imaging.