高功率微波作用下半导体器件失效和防护分析

Semiconductor Device Failure and Protection Analysis Under High-Power Microwave Action

高功率微波是通过直接及间接的耦合方式产生电热效应,会在不同程度上对电子通信设备产生干扰,导致设备出现无法逆转的损伤。本文重点分析高功率微波作用下半导体器件失效问题,对集中不同列的晶体管受到高脉冲影响产生的变化进行分析,提出了瞬态稳压抑制器的优化方式,有利于半导体器件失效防护。

High-power microwave produces electrocaloric effects through direct and indirect coupling,and will interfere with electronic communication equipment to varying degrees,resulting in irreversible damage to the equipment.This paper focuses on the analysis of semiconductor device failure problem under the action of high-power microwave,analyzes the changes of transistors in different columns caused by the influence of high pulses,and proposes the optimization method of transient voltage stabilizer suppressor,which is conducive to the failure protection of semiconductor devices.