一款基于GaAs工艺的超宽带混频多功能芯片

An ultra⁃wideband mixing multifunctional chip based on GaAs process

针对无源混频器需要高本振功率驱动的问题,采用砷化镓(GaAs)0.25μm PHEMT工艺,设计了一款集成双平衡无源混频器和本振驱动放大器的超宽带混频多功能芯片。混频器由肖特基二极管堆和两个结构新颖的平面螺旋间隔互绕式补偿型marchand巴伦构成,本振驱动放大器采用单电源两级自偏式负反馈共源结构。多功能芯片射频(RF)带宽为8~20 GHz,本振(LO)带宽为8~20 GHz,中频(IF)带宽为0.01~5 GHz。在本振驱动功率为-3 dBm时,芯片变频损耗典型值为8.0 dB,本振/射频隔离度典型值为25 dB,本振/中频隔离度典型值为45 dB,射频/中频隔离度典型值为45 dB,输入为1 dB功率压缩点典型值为12 dBm,驱动放大器功耗为+5 V/50 mA,芯片尺寸仅为2.2 mm×1.15 mm×0.1 mm。该混频多功能芯片的实测结果与仿真结果对比吻合,电特性优良,具有良好的应用前景。

In order to solve the problem of passive mixers requiring high local oscillator power,an ultra⁃wideband mixing multifunctional chip integrating a dual balanced passive mixer and a local oscillator driving amplifier was designed using gallium arsenide(GaAs)0.25μm PHEMT process.The mixer is composed of Schottky diode stack and two novel planar spiral interval compensation type Marchand baluns.The local oscillator driving amplifier adopts a single power supply two⁃stage self⁃biased negative feedback common source structure.The RF bandwidth is 8~20 GHz,the LO bandwidth is 8~20 GHz,and the IF bandwidth is 0.01~5 GHz.When the local oscillator drive power is-3 dBm,the frequency conversion loss typical value is 8.0 dB,the LO/RF isolation typical value is 25 dB,the LO/IF isolation typical value is 45 dB,the RF/IF isolation typical value is 45 dB,the input 1 dB power compression point typical value is 12 dBm,and the power consumption of the driving amplifier is+5 V/50 mA.The chip size is only 2.2 mm×1.15 mm×0.1 mm.The actual measurement results of the mixer multifunctional chip are consistent with the simulation results,with excellent electrical characteristics and good application prospects.