摘要
基于300 mm 0.18μm MS 5 V工艺平台设计并流片了1k×16一次性可编程OTP器件,并对存储单元的结构、工作原理及工艺等可能影响数据保持寿命的因素进行了分析。根据Arrhenius寿命模型对不同样品设置了高温老化实验测试,收集数据并对OTP器件的保持特性进行建模。通过225℃、250℃和275℃条件下的高温老化加速实验,拟合样品最大数据保持时间曲线。在生产过程中可能出现的最差产品条件下,对1/(kT)与数据保持时间曲线进行数学拟合,计算在不同失效条件下的浮栅电荷泄漏的激活能和最大数据保持时间。
Based on a 300-mm 0.18-μm MS 5-V process platform,a 1k×16 one-time programmable(OTP)device is designed and streamed,and the structure,working principle,and process of the storage unit that may affect the data retention life are analyzed.To model the retention characteristics of OTP devices,we conducted high-temperature aging experiments using different samples according to the Arrhenius life model,and data were collected after testing.Additionally,the maximum retention time of the sample data was calculated using linear fitting under conditions of 225,250,and 275℃.Finally,under the worst product conditions that may occur in the production process,the activation energy and maximum data retention time of the floating gate charge leakage under different failure conditions were calculated through the mathematical fitting of 1/(kT)and the data retention time curve.
作者
钟岱山
王美玉
陈志涛
张有志
叶继兴
朱友华
ZHONG Daishan;WANG Meiyu;CHEN Zhitao;ZHANG Youzhi;YE Jixing;ZHU Youhua(Nantong University,Nantong,226019,China;Institute of Semiconductors,Guangdong Academy of Sciences,Guangzhou,510651,China;Yuexin Semiconductor Co.,LTD,Guangzhou,510700,China)
出处
《微电子学》
CAS
北大核心
2024年第2期346-350,共5页
Microelectronics
基金
广东省重点领域研发计划资助项目(2022B0101180001)
广东省科学院发展专项资金项目(2021GDASYL-20210301001)。