电磁干扰环境MOS器件可靠性表征方法研究

Research on reliability characterization method for MOS devices under electromagnetic interference environment

工业芯片MOS器件的可靠性表征通常基于恒压应力或梯度应力方法对器件进行加速实验测试,根据测试结果对器件进行寿命评估。由于加速实验测试条件较为单一,难以覆盖工业芯片常见电磁干扰应用环境,MOS器件实际应用场景退化程度不能根据此方法进行有效界定,进而影响对工业芯片工作稳定性的精准判断。本研究提出一种微观层面MOS器件寿命评估方法,结合TCAD仿真软件对电磁干扰环境MOS器件寿命进行预测。该方法有效避免了电磁干扰环境器件输出波动带来的错误反馈,对器件寿命的预测具备一定保守性,能较大限度保证芯片在电磁环境中的正常运作。

The reliability characterization of industrial-chip-featured MOS devices typically involves accelerated life tests based on constant voltage stress or voltage ramp stress methods,followed by lifetime evaluation based on the test results.As test conditions for these methods are relatively simple,they fail to satisfy the requirements of the common electromagnetic interference environments faced by industrial chips.The degradation of MOS devices in real scenarios is challenging to effectively delineate,thereby affecting the precise assessment of the operation state of chips.In this research,we propose a MOS device life assessment method from a micro perspective,combined with TCAD simulation software,to predict the life of MOS devices under electromagnetic interference environments.The method effectively avoids the error feedback caused by fluctuations on device outputs.The device life predicted here is somewhat conservative,which,to a greater extent,ensures the stable operation of chips in electromagnetic environments.