金红石TiO_(2)纳米线忆阻器的制备及阻变存储机制

Preparation and Resistive Switching Mechanism of Rutile TiO_(2)Nanowire Memristor

本工作采用简单高效的一步水热法工艺制备了具有一维有序结构的金红石TiO_(2)纳米线阵列,设计了Au/TiO_(2)/FTO器件结构的金红石TiO_(2)纳米线忆阻器,系统研究了器件的阻变存储特性和存储机制,构建了器件基于氧空位迁移的非线性阻变存储机制模型。结果表明,Au/TiO_(2)/FTO结构金红石TiO_(2)纳米线忆阻器具有非易失性的双极性阻变存储特性,器件的阻变开关比可以稳定地保持在10^(2)以上。此外,器件在低阻态时满足线性的欧姆导电特性,在高阻态时服从陷阱控制的空间电荷限制电流传导机制,而器件的阻变存储行为则遵循基于氧空位迁移的非线性离子迁移阻变存储机制,研究结果表明金红石TiO_(2)纳米线忆阻器在下一代非易失性存储器方面具有重要的应用潜力。

In this work,the one-dimensional ordered rutile TiO_(2)nanowire arrays were fabricated by a facile hydrothermal process.The rutile TiO_(2)nanowire memory device with the Au/TiO_(2)/FTO structure has been prepared.The resistive switching mechanism of the Au/TiO_(2)/FTO device has been studied systematically and the nonlinear resistive switching model modified by oxygen vacancies has been developed.The Au/TiO_(2)/FTO device indicates a nonvolatile bipolar resistive switching characteristic.A high resistance ratio in excess of two orders of magnitude was obtained in the TiO_(2)nanowire-based Au/TiO_(2)/FTO device.Furthermore,the resistive switching behaviors of the TiO_(2)nanowire memory device are modulated by the trap regulated SCLC mechanism in the high resistance state and the Ohmic conduction mechanism in the low resistance state,respectively.In addition,the nonlinear ion-drift model adjusted by oxygen vacancies has been proposed,which has been suggested to be responsible for the nonvolatile resistive switching behavior of the Au/TiO_(2)/FTO device.This work demonstrates that the Au/TiO_(2)/FTO device may be a potential candidate for future nonvolatile memory applications.