钽掺杂FTO薄膜的制备及其光学电学性能的影响

Preparation and the effect on optical-electrical properties oftantalum doped FTO film

采用气溶胶辅助化学气相沉积(AACVD)以单丁基氯化锡(MBTC)为锡源、氟化铵(NH 4F)为氟源、甲醇做溶剂、五氯化钽(TaCl_(5))为钽源在钠钙玻璃上成功沉积Ta掺杂的FTO(TFTO)薄膜。通过X射线衍射(XRD)、场发射扫描电镜(FESEM)、X光电子能谱(XPS)、分光光度计、霍尔效应测试仪等设备分析了薄膜的物相组成、微观形貌、光学性能、电学性能和低辐射性能。结果表明,钽掺杂的FTO薄膜具有四方金红石结构,为N型半导体。当Ta/Sn为1%(原子比分数)时,可见光区段透射比T为74.18%、电阻率ρ为2.78×10^(-4)Ω·cm、载流子浓度n为1.44×10^(21)cm^(-3)、迁移率μ为18.73 cm^(2)/V·s、红外反射率R IR为94%、辐射率ε为0.12。

To improve the optical,electrical,and low-radiation performance of FTO thin films,in this paper,tantalum doped FTO(TFTO)films were successfully prepared on soda-calcium glass by aerosol assisted chemical vapor deposition(AACVD).The monobutyl tin chloride(MBTC)was used as tin source,ammonium fluoride(NH 4F)as fluorine source,methanol as solvent,tantalum pentachloride(TaCl_(5))as tantalum source and sodium-calcium glass as base.The phase composition,micro-morphology,optical properties,electrical properties,and low radiation properties of the films were analyzed using X-ray diffraction(XRD),field emission scanning electron microscopy(FESEM),X-ray photoelectron spectroscopy(XPS),a spectrophotometer,and a Hall effect tester.The results show that TFTO(SnO_(2):F,Ta)has a tetragonal rutile structure and is an N-type semiconductor.When Ta/Sn atomic ratio is 1%,the visible transmittance T is 74.18%,the resistivityρis 2.78×10^(-4)Ω·cm,the carrier concentration n is 1.44×10^(21)/cm^(3),the mobilityμis 18.73 cm^(2)/(V·s),the infrared reflectance R IR is 94%,and the emissivityεis 0.12.Tantalum doping can effectively improve the electrical properties,carrier concentration and infrared reflectance of FTO films,and has a low effect on visible transmittance.