氧化镍空穴材料在Ⅱ-Ⅵ族量子点电致发光器件中的应用进展

Development of Nickel Oxide Hole Materials inⅡ-ⅥQuantum Dot Electroluminescent Devices

鉴于高效发光的Ⅱ-Ⅵ族量子点(Ⅱ-ⅥQD)电致发光(EL)器件已达到基本的商用需求,器件长期性能(寿命)受到了更多的重视。Ⅱ-ⅥQD EL器件中PEDOT:PSS材料易吸湿、易腐蚀ITO电极,这对器件寿命及商业应用潜力存在负面影响。采用高稳定性的NiO代替PEDOT:PSS可避免材料对器件稳定性产生影响。本文系统综述了NiO空穴材料在Ⅱ-ⅥQD EL器件中的研究进展,重点归纳了NiO薄膜的不同制备方法、掺杂和界面特性对器件性能的影响,最后对基于金属氧化物空穴功能层的Ⅱ-ⅥQD EL器件的研究趋势进行了展望,以期为制备在材料与器件层面稳定、高效的电致发光器件提供借鉴。

Highly efficient groupⅡ-Ⅵquantum dot(Ⅱ-ⅥQD)electroluminescence(EL)devices have been able to meet the basic commercial requirements,more attention has been paid to the long-term performance(lifetime)of the device.In theⅡ-ⅥQD EL devices,PEDOT:PSS is easy to absorb moisture and corrode ITO electrodes,which has a negative impact on device lifetime and commercial application potential.Replacing organic PEDOT:PSS with highly stable NiO could avoid the influence of materials on the stability of devices.This manuscript systematically reviews the research progress of NiO hole functional material inⅡ-ⅥQD EL devices,and focuses on the effects of different preparation methods,doping and interface characteristics of NiO films on the performance of devices.Finally,we made a prospect on the research trend ofⅡ-ⅥQD EL devices based on the metal oxide hole functional layer,which may provide views for the preparation of stable and efficient EL devices at the material and device levels.