2Murari B,Bertotti F,Vignola G A. Smart power ICs:Technologies and applications. Springer, 1996:105.
3Merchant S, Aronold E,et al. Realization of high breakdown voltage(＞ 700V) in thin SOI device. Proc 3rd Int Symp on Power Semiconductor Devices and ICs, 1991 : v31.
4Matsudai T,Nakagawa A. Simulation of a 700V high voltage device structure on a thin SOI. Proc 4th Int Symp On Power Semiconductor Devices and ICs, 1992: 272.
5Tadikonda R, Hardikar S, SankaraNarayanan E M. Realizing high breakdown voltage(＞ 600V) in partial SOI technology.Solid-State Electron,2004,48:1655.
6Li Z J,Luo L Y,Guo Y F,et al. Breakdown theory of a new SOI composite structure. ICCCAS,2002,6:1744.
7Li Zhaoji, Guo Yufeng, Fang Jian, et al. A new 2-D analitcal model of double RESURF in SOI high voltage devices (invited). Proc ICSICT,2004,10:328.
