40nm工艺中的低温注入替代研究与实现

Study and Implementation of Low Temperature Injection Substitutior in 40nm Process

阐述集成电路40nm工艺中的低温注入替代技术,从机理出发,通过实验,发现采用同族其他元素的常温注入来替代低温注入可实现同样的功能,从而实现高效率和低能耗的要求。

This paper describes the low-temperature injection replacement technology in the 4onm process of integrated circuits.Starting from the mechanism,through experiments,it is found that using normal temperature injection of other elements in the same family to replace low-temperature injection can achieve the same function,thus achieving the requirements of high efficiency and low energy consumption.