50nm Nor Flash中的B/S Deposition用Normal Cu替代RFxCu工艺研究

Study on Replacing RFxCu with Normal Cu Process for B/S Placement in 50nm NOR Flash

阐述如何使用NormalCu机型来沉积小线宽50nm产品的Barrier&Seed层,通过调制偏压电压及时间,改善了台阶覆盖性,避免了小线宽产品在开口处overhang的形成,提升了Normal机型工艺极限。使得制品缺陷、电性、良率和可靠性与RFx Cu机型在最终的产品性能上表现一致,在50nm Nor Flash平台上顺利量产使用。

This paper describes how to use the NormalCu model to deposit Barrier&Seed layers of small linewidth 5onm products.By modulating bias voltage and time,the step coverage is improved,avoiding the formation of overlap at the opening of small linewidth products,and enhancing the process limit of the Normal model.It ensures that product defects,electrical properties,yield,and reliability are consistent with the final product performance of the RFx Cu model,and can be smoothly mass-produced and used on the 5onm No Flash platform.