摘要
Tungsten disulfide(WS_(2))has been reported to show negligible stacking dependence under ambient conditions,impeding its further explorations on physical properties and potential applications.Here,we realize efficient modulation of interlayer coupling in bilayer WS_(2)with 3R and 2H stackings by high pressure,and find that the pressure-triggered interlayer coupling and pressure-induced resonant-to-nonresonant transition exhibit prominent stacking dependence,which are experimentally observed for the first time in WS2.Our work may unleash the stacking degree of freedom in designing WS_(2)devices with tailored properties correlated to interlayer coupling.
基金
supported by the National Natural Science Foundation of China(Grant Nos.T2325007,62250073,U21A20459,62004026,61774029,62104029,12104086,62150052,U23A20570,and 51902346)
the Sichuan Science and Technology Program(Grant Nos.2021JDTD0028,2023NSFSC1334,24NSFSC5852,and 24NSFSC5853)
the Science and Technology Innovation Program of Hunan Province(Grant No.2021RC3021)。
