增强型p⁃GaN栅HEMT器件的抗辐照性能研究

Study on the Radiation Effects of Enhancement⁃mode p⁃GaN Gate HEMT Devices

为研究应用于宇航领域增强型GaN HEMT器件的抗辐照性能,制备了导通电流为20 A、击穿电压为345 V的增强型p-GaN栅HEMT器件,并分别研究了器件抗总剂量效应能力与抗单粒子效应能力。实验结果表明,研制的增强型p-GaN栅HEMT器件在辐照剂量率为1.55 rad(Si)/s、累积总剂量为300 krad(Si)的条件下,器件的阈值电压保持不变,同时器件在传能线密度为37.3 MeV/(mg·cm^(2))的离子辐照下,仍然实现了大于300 V的击穿电压。表明研制的增强型p-GaN栅HEMT器件具有良好的抗辐照能力。

As enhancement-mode(E-mode)GaN HEMT devices gain prominence in aerospace applications,investigating their radiation resistance becomes increasingly critical.This study focuses on an E-mode p-GaN gate HEMT device,featuring a 20 A conduction current and a 345 V break⁃down voltage.Experimental assessments were performed to examine the device's response to both to⁃tal dose effects and single-particle events.The results indicate that,under irradiation conditions with a dose rate of 1.55 rad(Si)/s and an accumulated dose of 300 krad(Si),the threshold voltage remains unchanged.Furthermore,under irradiation with ion linear energy transfer of 37.3 MeV/(mg·cm^(2)),the device maintains a breakdown voltage exceeding 300 V.These findings affirm the exceptional radi⁃ation resistance of the enhanced p-GaN gate HEMT device discussed in this paper.