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X波段单面场微带隔离器设计

Design of X-band single-side magnetic field microstrip isolator
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摘要 针对提升微带器件隔离度的需求,根据微带环行器的设计理论,设计了一种工作在X波段的高隔离度、高温度稳定性的单面场微带隔离器。通过对微带器件工作模式分析,提出开缝六边形结匹配矩形开路负载的电路结构。测试结果表明,采用开缝六边形结匹配矩形开路负载电路结构设计的X波段单面场微带隔离器,在11~11.4 GHz工作频率内、-55~+85℃温度下,插入损耗小于0.3 dB,电压驻波比小于1.3,隔离度大于23 dB,达到设计要求。 In order to improve the isolator of microstrip devices,a single-side magnetic field microstrip isolator with high isolation and high temperature stability are designed according to the design theory of microstrip circulator.Based on the analysis of the working mode of microstrip devices,a new circuit structure of silted hexagon junction matching rectangular open load is designed.The test result show that in the operating frequency band of 11 to 11.4 GHz and the temperature range is-55 to +85 ℃,the X-band single-side magnetic field microstrip isolator designed with rectangular open load circuit structures matched by silted hexagon junction has the insertion loss less than 0.3 dB,the VSWR less than 1.3,the isolation greater than 23 dB,meeting the design requirements.
作者 孙静 陈宁 高男 杜俊波 王倩 李扬兴 SUN Jing;CHEN Ning;GAO Nan;DU Jun-bo;WANG Qian;LI Yang-xing(Ninth Research Institute,China Electronics Technology Group Corporation,Mianyang 621000,China)
出处 《磁性材料及器件》 CAS 2024年第4期62-66,共5页 Journal of Magnetic Materials and Devices
关键词 单面场微带隔离器 X波段 隔离度 开缝六边形结电路结构 single-side magnetic field microstrip isolator X-band isolation silted hexagon junction circuit structures
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