以Spiro-OMeTAD作为空穴传输层的ZnS/SnS太阳能电池模拟研究

Simulation on ZnS/SnS Solar Cells with Spiro-OMeTAD as Hole Transport Layer

硫化亚锡(SnS)因其合适的电学和光学特性而被作为太阳能电池的吸收层进行研究。Spiro-OMeTAD常用作空穴传输层以提高太阳能电池性能。本文采用wxAMPS软件对SnS基太阳能电池ZnS/SnS/Spiro-OMeTAD进行模拟研究。主要研究分析Spiro-OMeTAD空穴传输层对太阳能电池性能的影响,其中包括:开路电压、短路电流密度、填充因子、光电转换效率及量子效率。研究结果表明:在加入Spiro-OMeTAD空穴传输层后,ZnS/SnS/Spiro-OMeTAD太阳能电池的开路电压(V_(OC))增加至0.958 V,短路电流(J_(SC))增加到32.96 mA/cm^(2),填充因子(FF)和光电转换效率(PCE)分别达到了79.26%和25.07%,电池性能取决于电池各层厚度、掺杂浓度、缺陷态密度及工作温度。通过研究表明Spiro-OMeTAD作为空穴传输层,有利于提高太阳能电池的各性能,并且ZnS/SnS/Spiro-OMeTAD是一种十分具有发展潜力的光伏器件结构。

Stannous sulfide(SnS) was investigated as an absorbing layer for solar cells due to its suitable electrical and optical properties.Spiro-OMeTAD is commonly employed as a hole transport layer to enhance the performance of solar cells.The ZnS/SnS/Spiro-OMeTAD solar cell was designed and simulated by the wxAMPS software.The effects of the Spiro-OMeTAD hole transport layer on the properties of solar cells were mainly studied,namely the effects on open-circuit voltage,short-circuit current density,filling factor,photoelectric conversion efficiency and quantum efficiency.The results show that the open-circuit voltage of the ZnS/SnS/Spiro-OMeTAD solar cells increase to 0.958 V and short-circuit current increase to 32.96 mA/cm^(2) when the Spiro-OMeTAD HTL is added.The fill factor and photoelectric conversion efficiency are 79.26% and 25.07%,respectively.The performance of the solar cells depends on the thickness of each layer,doping concentration,Gaussian defect state density,and temperature.The results demonstrate that the Spiro-OMeTAD,as a hole transport layer,is beneficial for enhancing various performance aspects of solar cells.Moreover,the ZnS/SnS/Spiro-OMeTAD exhibits a great potential as a photovoltaic device structure.