金属催化辅助无转移石墨烯薄膜制备技术研究进展

Progress in the Synthesis of Transfer-Free Graphene Films with Metal Catalyst

作为一种原子级别厚度的二维碳材料,石墨烯已经被证明具有优异的电学、光学、热学等综合物化性能。但是如何制备高质量、大面积晶圆级别的石墨烯薄膜仍然是激发人们进行科学研究以及器件集成领域的一大热点问题。传统过渡金属催化合成石墨烯薄膜的化学气相沉积工艺往往需要复杂费时的后处理转移工序,会对石墨烯薄膜本征性能造成巨大破坏,因此研究如何在介电基底上直接制备高质量大面积的石墨烯薄膜具有重大意义。基于此目的而兴起的无转移石墨烯薄膜制备研究已经取得了显著的科学成就,其中金属催化辅助合成无转移石墨烯薄膜的研究尤其引人注目,并且基于原位合成石墨烯薄膜性能测试及器件验证均取得了不错的效果。尽管如此,由于催化剂种类、形态以及结构设计等因素的不同,针对金属催化剂在无转移石墨烯薄膜合成过程中的工艺策略,不同的研究有不同的设计。本文基于无转移石墨烯薄膜制备的最新研究结果,对金属在催化转化获得无转移石墨烯过程中的作用机理和设计策略进行了系统全面的分析,对促进高质量晶圆级石墨烯薄膜的合成及在电子、光电子等功能器件领域的应用具有重要的指导意义。

As a kind of atomic thin two-dimensional materials with a hexagonal honeycomb structure of carbon atoms,graphene exhibits exceptional electronic,optical and thermal properties and attracts worldwide interests for related functional device applications.Before the integration of semiconductor devices,high-quality and single crystal graphene is prerequisite for scientific research and practical application.Due to the sophisticated and time-consuming post-transferring procedure,metal-catalyzed synthesis of graphene films based on the chemical vapor deposition more or less introduces structural defects(cracks,winkles and tears)and degrades the intrinsic superb properties of graphene.Growth of graphene films on dielectric substrates,therefore,plays a significant role in the large-scale functional applications of graphene.Metal-assisted transfer-free synthesis of graphene on the dielectric substrates has achieved high-level accomplishment and gained excellent detector response in the devices.Unfortunately,the microstructural mechanism and design strategy of metal catalyst in the transfer-free graphene film growth have not been clear and systematical elucidated.Given all that we try to interpret and conclude the effects and design of metal catalysts motivated the direct synthesis of graphene film on non-catalytic substrates in this paper.These comprehensive analyses will provide a valuable guidance for the application of graphene film in electronic,optoelectronic and even thermo-response devices.