基于Drude模型ITO薄膜性能及工艺控制分析

Analysis of ITO Film Performance and Process Control Based on Drude Model

利用离子辅助电子束蒸发技术制备锡掺杂氧化铟薄膜,参考“第四范式”研究思路,根据薄膜光学性质特点建立以Drude振子为核心的光学模型,从模型参数入手,分析载流子浓度、迁移率对光学性能影响,得出提高载流子迁移率能够同步提升薄膜产品的光、电性能。总结分析文献报道中的主要成果,提出性能提升工艺方案,样品经验证载流子迁移率由6.3 cm^(2)·V^(-1)·s^(-1)提高到18.3 cm^(2)·V^(-1)·s^(-1),厚度由315.5 nm减薄到155.2 nm情况下,面电阻由50.1 Ω/□减小到26.2Ω/□。

The ion-assisted electron beam evaporation technology is used to prepare ITO thin films.With reference to the"fourth paradigm"research idea,an optical model with the Drude oscillator as the core is established based on the optical properties of the thin film.Starting from the model parameters,the effect of carrier concentration and mobility is analyzed.According to the influence of optical performance,it is concluded that increasing the carrier mobility can simultaneously improve the optical and electrical properties of thin film products.Summarize and analyze the main results of literature reports,and proposed a performance improvement process plan.It was verified that the carrier mobility of the sample was increased from 6.3 cm^(2)·V^(-1)·s^(-1)to 18.3 cm^(2)·V^(-1)·s^(-1),and the thickness was reduced from 315.5 nm in the case of 155.2 nm,the surface resistance is reduced from 50.1Ω/□to 26.2Ω/□.