Giant piezotronic effect in ferroelectric field effect transistor

The piezotronics effect utilizes a piezopotential to modulate and control current in piezo-semiconductors.Ferroelectric materials,as a type of piezoelectric materials,possess piezoelectric coefficients that are significantly larger than those found in conventional piezoelectric materials.Here,we propose a strain modulated ferroelectric field-effect transistor(St-FeFET)utilizing external strain instead of gate voltage to achieve ferroelectric modulation,which eliminates the need for gate voltage.By applying a very small strain(0.01%),the St-FeFET can achieve a maximum on-off current ratio of 1250%and realizes a gauge factor(GF)of 1.19×10^(6),which is much higher than that of conventional strain sensors.This work proposes a new method for realizing highly sensitive strain sensors and presents innovative approaches to the operation methods of ferroelectric field-effect transistors as well as potential applications for coupling of strain sensors and various devices across different fields.