期刊文献+

半加成工艺中去钻污过程对剥离强度的影响

Effect of Desmear on Peel Strength in Semi-additive Process
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摘要 阐述去钻污作为半加成工艺中关键的一个步骤,需要保证介质材料和铜层间的结合力在工艺完成后不会下降。通过拉力测试以及扫描电子显微镜、飞行时间二次离子质谱、X射线光电子能谱表征,分析去钻污工艺对样品树脂和铜层间的剥离强度的影响机制。结果表明,样品的失效模式为树脂的内聚破坏,经过去钻污工艺后树脂表面的孔洞发生破损,导致Mn、Cu等离子渗透进树脂内部,对树脂基体产生氧化作用从而降低树脂的内聚力。因此在实际生产中需要调整药水浓度等参数,防止破孔的发生。 This paper expounds desmearisa critical step in the semi-additive process,and it is necessary to ensure that the adhesion between the dielectric material and the copper layer does not decrease after the desmear is completed.Through tensile testing,scanning electron microscopy,time-of-flight secondary ion mass spectrometry,and X-ray photoelectron spectroscopy,the influence mechanism of the desmear on the peel strength between the sample resin and copper layers was analyzed.The results show that the failure mode of the sample is the cohesion failure of the resin,and the holes on the surface of the resin are damaged after the desmear,resulting in the penetration of Mn and Cu plasma into the resin and the oxidation of the resin,thereby reducing the cohesion of the resin.Therefore,in actual production,it is necessary to adjust parameters such as the concentration of the reagents to prevent the occurrence of holes.
作者 林君逸 俞宏坤 欧宪勋 程晓玲 林佳德 LIN Junyi;YU Hongkun;OU Xianxun;CHENG Xiaoling;LIN Jiade(Department of Materials Science,Fudan University,Shanghai 200433,China;Advanced Semiconductor Engineering(Shanghai)Ltd.,Shanghai 201203,China)
出处 《集成电路应用》 2024年第7期74-77,共4页 Application of IC
关键词 树脂 印制电路板 去钻污 剥离强度 失效模式 resin printed circuit boards desmear peel strength failure mode
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  • 1王桂香,韩家军,李宁,黎德育.塑料表面直接电镀[J].电镀与精饰,2005,27(2):20-23. 被引量:12
  • 2刘仁志.ABS塑料电镀中影响结合力的因素[J].电镀与涂饰,1989,8(1):30-32. 被引量:2
  • 3Bischof C,Possart W. Adhesion-theoretical and experimental basics[M]. Berlin :Akademie Verlag,1983.
  • 4Venkatesh Sundaram. Advances in electronic packaging technologies by uhrasmall mierovias, super-fine inlerconnections and low loss polymer dieleclrics [D].Atlanta: Georgia Institute of Technology. 2009: 1-3.
  • 5Takuya Yamamoto, Takashi Kataoka, John Andresakis. Allowable copper thickness for fine pitch patterns formed by a subtractive method[J]. Circuit World, 2001, 27 ( 1 ) : 6-12.
  • 6Hiroyuki Nishiwaki. Katsuhiro Yoshida. Shenghua Li. Metallization for Semi-Additive Processing of Build-Up Dielectric Materials, Part I: Process Development Overview[EB/OL]. [2012-12-14]. http:// pebOO7.eom/pages/columns.cgi ? clmid=29&arfid=59158&_pf_= 1.
  • 7Hiroyuki Nishiwaki, Kalsuhiro Yoshida, Shenghua Li. Metallization for Semi-Additive Processing, Part I1: Processing of Next-Generation Bui!.d-Up Dielectric Materials[EB/OL]. [2012-L2-L4]. http://www. pcbOO7.com/pagesh, ohnnns.cgi?clmid=29&artid=59445&_pf=l.
  • 8Bryan Chueh, Cindy Wu, Crystal Li, et al. Adhesion Promotion Technology for Semi-Additive Process[C]. Microsystems, Packaging, Assembly & Circuits Technology Conference, 2008:314-317.
  • 9林金堵.信号传输高频化和高速数字化对PCB的挑战(1)——对导线表面微粗糙度的要求[J].印制电路信息,2008(10):15-18. 被引量:22
  • 10林金堵,吴梅珠.PCB电镀铜技术与发展[J].印制电路信息,2009(12):27-32. 被引量:26

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